Microstructure and metal-insulator transition of NdNiO3 thin films on various substrates

被引：23

作者：

Laffez, P

Zaghrioui, M

Monot, I

Brousse, T

Lacorre, P

机构：

[1] Univ Maine, Fac Sci, Lab Phys Etat Condense, CNRS, F-72085 Le Mans 9, France

[2] Inst Sci Mat & Rayonnement, Lab Cristallog & Mat, CNRS, F-14050 Caen, France

[3] ISITEM, Lab Genie Mat, F-44306 Nantes, France

[4] Univ Maine, Fac Sci, Lab Fluorures, CNRS, F-72085 Le Mans 9, France

来源：

THIN SOLID FILMS | 1999年 / 354卷 / 1-2期

关键词：

thin films; perovskite; NdNiO3; metal-insulator transition; RF sputtering;

D O I：

10.1016/S0040-6090(99)00557-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We succeeded in preparing single phase NdNiO3 thin films with a thermally driven metal-insulator transition by RF sputtering and subsequent annealing under oxygen pressure. The films were strongly oriented and their electrical properties have been studied between 80 and 300 K. The influence of the substrate on the transport properties was studied. The films exhibit a metal-insulator transition around 160 K when the bulk shows a transition around 200 K. (C) 1999 Elsevier Science S.A, All rights reserved.

引用

页码：50 / 54

页数：5

共 13 条

[1]

CARVAJAL JR, 1998, PHYS REV B, V57, P456

[2]

DENATAL JF, 1997, MATER RES SOC S P, V479, P147

[3] LATTICE DISTORTION EFFECTS ON ELECTRICAL SWITCHING IN EPITAXIAL THIN-FILM NDNIO3 [J].