Dislocation-free and lattice-matched Si/GaP1-xNx/Si structure for photo-electronic integrated systems

被引：66

作者：

Momose, K ^{[1
]}

Yonezu, H ^{[1
]}

Fujimoto, Y ^{[1
]}

Furukawa, Y ^{[1
]}

Motomura, Y ^{[1
]}

Aiki, K ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 25期

关键词：

D O I：

10.1063/1.1425451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We proposed a Si/III-V-N compound semiconductors/Si structure, which is applicable to optoelectronic integrated circuits (OEICs). The feature of this structure is that optoelectronic devices and Si electronic devices could be fabricated by low-temperature planar process at the same time. A dislocation-free and lattice-matched Si/GaP1-xNx/Si (x=2.9%) structure, which is a basic structure for OEICs, was grown by molecular-beam epitaxy. The images of transmission electron microscopy revealed that there were no threading dislocations and misfit dislocations in the epitaxial layers. It was clarified that the Si and GaP1-xNx layers were lattice-matched to Si and had structural high crystalline quality comparable to Si substrates. (C) 2001 American Institute of Physics.

引用

页码：4151 / 4153

页数：3

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