Frenkel-Kontorova model of vacancy-line interactions on Ga/Si(112)

被引：46

作者：

Erwin, SC ^{[1
]}

Baski, AA

Whitman, LJ

Rudd, RE

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA

[3] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.83.1818

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We develop an exactly solvable microscopic model for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system. The model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good agreement with experimental observations, reveal an unexpectedly complex interplay between compressive and tensile strain within the mixed Ga-Si surface layer.

引用

页码：1818 / 1821

页数：4

共 7 条

[1] The structure of Si(112):Ga-(Nx1) reconstructions [J].