MISSING DIMERS AND STRAIN RELIEF IN GE FILMS ON SI(100)

被引：87

作者：

TERSOFF, J

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.45.8833

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The 2 x 8 reconstruction of Ge films on Si(100) is shown to arise from ordered arrays of rebonded missing dimers (RMD's). Such a reconstruction was suggested by Pandey for Si(100). However, because of their large tensile stress, RMD's are much more energetically favorable in epitaxially compressed Ge films. For Si(100), RMD's have very small energy, and their presence may account for the puzzling discrepancy between theory and experiment for the stress anisotropy.

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页码：8833 / 8836

页数：4

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