SCANNING TUNNELING MICROSCOPY STUDIES OF THE GROWTH-PROCESS OF GE ON SI(001)

被引：84

作者：

MO, YW

LAGALLY, MG

机构：

[1] Department of Materials Science and Engineering, College of Engineering, University of Wisconsin, Madison

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91100-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth process of Ge on Si(001) has been investigated using a scanning tunneling microscope (STM) and a comprehensive picture of the major kinetic processes is obtained. Surface diffusion of Ge on Si(001) is found to be anisotropic. The two types of monatomic steps are shown to have different lateral sticking coefficients for Ge adatoms. The transition from 2D to 3D growth is found to occur via a kinetic pathway - a novel type of intermediate 3D cluster.

引用

页码：876 / 881

页数：6

共 24 条

[1] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE [J].