Electrochemical deposition of praseodymium oxide on tin-doped indium oxide as a thin sensing film

被引:16
作者
Shrestha, S.
Marken, F.
Elliott, J.
Yeung, C. M. Y.
Mills, C. E.
Tsang, S. C. [1 ]
机构
[1] Univ Reading, Sch Chem, Surface & Catalysis Res Ctr, Reading RG6 6AD, Berks, England
[2] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England
[3] Smiths Detect, Watford WD23 2BW, Herts, England
关键词
D O I
10.1149/1.2198094
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Fabrication of a thin praseodymium oxide film is of great technological interest in sensor, semiconducting, and ceramic industries. It is shown for the first time that an ultrathin layer of praseodymium oxide can be deposited on tin-doped indium oxide surface (ITO) by applying a negative sweeping voltage (cathodic electrodeposition) to the aqueous solution containing Pr(NO3)(3) and H2O2 using cyclic voltammetry, followed by annealing the film at 500 S C for 1 h. X-ray diffraction suggested that the predominant phase of the film is Pr6O11 and atomic force microscopy and scanning electron microscopy characterizations indicated that this film is assembled with a monolayer coverage of spherical praseodymium oxide nanoparticles packed closely on the ITO surface. AC impedance measurements of the thin Pr6O11 film on ITO also revealed that the composite material displays a much higher electrical conductivity compared to the pure ITO. As a result, the material could suitably be used as a new chemical sensor. (c) 2006 The Electrochemical Society.
引用
收藏
页码:C517 / C520
页数:4
相关论文
共 21 条
[1]   Growth of praseodymium oxide thin films by liquid injection MOCVD using a novel praseodymium alkoxide precursor [J].
Aspinall, HC ;
Gaskell, J ;
Williams, PA ;
Jones, AC ;
Chalker, PR ;
Marshall, PA ;
Bickley, JF ;
Smith, LM ;
Critchlow, GW .
CHEMICAL VAPOR DEPOSITION, 2003, 9 (05) :235-+
[2]   Electrochemical Al2O3-ZrO2 composite coatings on non-oxide ceramic substrates [J].
Chaim, R ;
Zhitomirsky, I ;
GalOr, L ;
Bestgen, H .
JOURNAL OF MATERIALS SCIENCE, 1997, 32 (02) :389-400
[3]   SEMICONDUCTION IN NON-STOICHIOMETRIC RARE EARTH OXIDES [J].
CHANDRASHEKHAR, GV ;
MEHROTRA, PN ;
RAO, GVS ;
SUBBARAO, EC ;
RAO, CNR .
TRANSACTIONS OF THE FARADAY SOCIETY, 1967, 63 (533P) :1295-+
[4]   SNO2 SENSORS - CURRENT STATUS AND FUTURE-PROSPECTS [J].
GOPEL, W ;
SCHIERBAUM, KD .
SENSORS AND ACTUATORS B-CHEMICAL, 1995, 26 (1-3) :1-12
[6]   Electrical and physical characteristics of PrTixOy for metal-oxide-semiconductor gate dielectric applications [J].
Jeon, S ;
Hwang, H .
APPLIED PHYSICS LETTERS, 2002, 81 (25) :4856-4858
[7]   Synthesis of electrochromic praseodymium-doped vanadium oxide films by molten salt electrolysis [J].
Kaneko, Y ;
Mori, S ;
Yamanaka, J .
SOLID STATE IONICS, 2002, 151 (1-4) :35-39
[8]   Oxygen ion transport in La2NiO4-based ceramics [J].
Kharton, VV ;
Viskup, AP ;
Naumovich, EN ;
Marques, FMB .
JOURNAL OF MATERIALS CHEMISTRY, 1999, 9 (10) :2623-2629
[9]   Direct observation of the barrier structure of a praseodymium-doped grain boundary in a zinc oxide bicrystal by charge collection microscopy [J].
Leach, C ;
Freer, R ;
Azough, F ;
Ling, Z .
INTERFACE SCIENCE, 2000, 8 (2-3) :141-146
[10]   Initial stages of praseodymium oxide film formation on Si(001) [J].
Müssig, HJ ;
Dabrowski, J ;
Ignatovich, K ;
Liu, JP ;
Zavodinsky, V ;
Osten, HJ .
SURFACE SCIENCE, 2002, 504 (1-3) :159-166