Growth of praseodymium oxide thin films by liquid injection MOCVD using a novel praseodymium alkoxide precursor

被引：28

作者：

Aspinall, HC

Gaskell, J

Williams, PA

Jones, AC ^{[1
]}

Chalker, PR

Marshall, PA

Bickley, JF

Smith, LM

Critchlow, GW

机构：

[1] Univ Liverpool, Dept Chem, Liverpool L69 3ZD, Merseyside, England

[2] Univ Liverpool, Dept Mat Sci & Engn, Liverpool L69 3BX, Merseyside, England

[3] Epichem Oxides & Nitrides, Wirral CH62 3QF, Merseyside, England

[4] Univ Loughborough, Inst Surface Sci & Technol, Loughborough LE11 3TU, Leics, England

来源：

CHEMICAL VAPOR DEPOSITION | 2003年 / 9卷 / 05期

关键词：

D O I：

10.1002/cvde.200304160

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: Praseodymium oxide thin films are prepared using a new volatile precursor (for structure of precursor LiCl complex, see Figure) by liquid injection MOCVD. The oxide, a wide-bandgap (3.9 eV) and high-K material. which is currently being investigated as a possible alternative to SiO2 films in silicon-based field-effect transistors, is deposited from [Pr(MMP)(3)] (mmp = OCMe2CH2OMe) in the presence of oxygen over the temperature ranae 350-600 degreesC.

引用

页码：235 / +

页数：5

共 36 条

[1] Volatile donor-functionalized alkoxy derivatives of lutetium and their structural characterization [J].