Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethylsilyl)amido]lanthanum

被引：25

作者：

Aspinall, HC

Williams, PA

Gaskell, J

Jones, AC

Roberts, JL

Smith, LM

Chalker, PR

Critchlow, GW

机构：

[1] Univ Liverpool, Dept Chem, Liverpool L69 3ZD, Merseyside, England

[2] Univ Liverpool, Dept Mat Sci & Engn, Liverpool L69 3BX, Merseyside, England

[3] Epichem Ltd, Wirral CH62 3QF, Merseyside, England

[4] Univ Loughborough, Inst Surface Sci & Technol, Loughborough LE11 3TU, Leics, England

来源：

CHEMICAL VAPOR DEPOSITION | 2003年 / 9卷 / 01期

关键词：

D O I：

10.1002/cvde.200290009

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Lanthanum silicate is deposited from a single-source precursor by injection MOCVD using La[N(SiMe3)(2)](3) as precursor. The depositions are carried out over 350-600degreesC without an additional silicon source. SEM analysis (Figure) shows that deposited films are smooth and featureless. AES analysis indicates that all the films are lanthanum silicate with silicon concentration ranging from 8.5 to 15.2 at.-%.

引用

页码：7 / +

页数：5

共 33 条

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[2]

Bradley D.C., 1978, METAL ALKOXIDES

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