LaAlO3 thin film deposited on Si(100) and MgO(100) substrates

被引：23

作者：

Cabanas, MV

Ragel, CV

Conde, F

Gonzalez-Calbet, JM

Vallet-Regi, M ^{[1
]}

机构：

[1] Univ Complutense Madrid, Fac Farm, Dept Quim Inorgan & Bioinorgan, E-28040 Madrid, Spain

[2] Univ Complutense Madrid, Fac Quim, Dept Quim Inorgan, E-28040 Madrid, Spain

[3] Inst Magnet Aplicado, Madrid 28230, Spain

来源：

SOLID STATE IONICS | 1997年 / 101卷

关键词：

superconducting thin films; buffer layers; pyrosol method;

D O I：

10.1016/S0167-2738(97)84030-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

LaAlO3 films have been deposited on Si(100) and MgO(100) substrates by a modified CVD process. Solutions of aluminum and lanthanum acetylacetonates were used as precursors. The influence of both deposition temperatures and substrates on the characteristics of these thin films has been studied.

引用

收藏

页码：191 / 195

页数：5

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