THIN-FILMS OF MAGNESIUM-OXIDE BY MODIFIED CVD - A BUFFER LAYER FOR HTCS FILMS

被引：29

作者：

VALLETREGI, M ^{[1
]}

LABEAU, M ^{[1
]}

GARCIA, E ^{[1
]}

CABANAS, MV ^{[1
]}

GONZALEZCALBET, JM ^{[1
]}

DELABOUGLISE, G ^{[1
]}

机构：

[1] INST NATL POLYTECH GRENOBLE,MAT & GENIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

来源：

PHYSICA C | 1991年 / 180卷 / 1-4期

关键词：

D O I：

10.1016/0921-4534(91)90635-C

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnesium oxide thin films, as buffer layers for depositing high-Tc superconducting thin films, were prepared by a modified CVD process. This process uses pyrolysis of an aerosol produced by ultra-high frequency spraying of a solution. The raw material was magnesium acetate dissolved in ethanol or butanol. The deposition was carried out in air between 450 and 600-degrees-C and thickness varies between 100 and 500nm. A highly <100> oriented polycrystalline film can be obtained on oxydized silicon wafers. The influence of deposition parameters on the film growth was examined by X-ray, SEM. Grain size varies between 60 and 150 nm. Electrical properties were examined by complex impedance spectroscopy and I(V) characteristic: resistivity (> 10(12) OMEGA. cm) and dielectric constant.

引用

页码：57 / 60

页数：4

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