MOSFET transistors fabricated with high permitivity TiO2 dielectrics

被引：363

作者：

Campbell, SA ^{[1
]}

Gilmer, DC ^{[1
]}

Wang, XC ^{[1
]}

Hsieh, MT ^{[1
]}

Kim, HS ^{[1
]}

Gladfelter, WL ^{[1
]}

Yan, JH ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT CHEM,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 01期

关键词：

D O I：

10.1109/16.554800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Layers of polycrystalline anatase TiO2 have been deposited through the thermal decomposition of titanium tetrakis-isopropoxide (TTIP). 500 Angstrom films deposited and annealed in oxygen at 750 degrees C had average roughnesses (R(a)) of about 30 Angstrom. Capacitors made form 190 Angstrom layers of TiO2 displayed a voltage dependent accumulation capacitance. This was postulated to be caused by finite width effects in the accumulation layer which we have dubbed the quantum capacitance effect. N-channel transistors made with these films showed near ideal behavior, but mobilities were significantly lower than those of thermal oxide MOSFET's. This mobility reduction was believed to be caused by interface states, which fell below 10(11) cm(-2) eV(-1) at midgap, but rose sharply on either side, unlike the ''U'' shaped behavior in thermal oxide MOSFET's.

引用

页码：104 / 109

页数：6

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