ELECTRONIC-PROPERTIES OF THE INTERFACE BETWEEN SI AND TIO2 DEPOSITED AT VERY LOW-TEMPERATURES

被引：187

作者：

FUYUKI, T

MATSUNAMI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 09期

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D O I：

10.1143/JJAP.25.1288

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：1288 / 1291

页数：4

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