An approach to cost-effective, robust, large-area electronics using monolithic silicon

被引：30

作者：

Huang, Kevin ^{[1
]}

Dinyari, Rostam ^{[1
]}

Lanzara, Giulia ^{[2
]}

Kim, Jong Yon ^{[1
]}

Feng, Jianmin ^{[2
]}

Vancura, Cyril

Chang, Fu-Kuo ^{[2
]}

Peumans, Peter ^{[1
,3
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Palo Alto, CA 94304 USA

[2] Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA

[3] Robert Bosch LLC, Res & Tech Ctr, Palo Alto, CA USA

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418906

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed an approach to build large-area electronics from monolithic silicon integrated circuits. The method used deep reactive ion etching to structure a monolithic silicon substrate into a stretchable, two-dimensional, wired network that can be expanded to cover large planar or curved surfaces to realize high-performance, large-area, monolithic silicon electronics in a cost-effective manner. This approach has applications in sensing, smart materials, electronic textile, RFID tag and microconcentrator solar cell manufacturing.

引用

页码：217 / +

页数：2

共 5 条

[1] A novel method for measuring the strength of microbeams [J].

Elata, D ;

Hirshberg, A .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2006, 15 (02) :396-405

[2] Fabrication of a cylindrical display by patterned assembly [J].

Jacobs, HO ;

Tao, AR ;

Schwartz, A ;

Gracias, DH ;

Whitesides, GM .

SCIENCE, 2002, 296 (5566) :323-325

[3] A stretchable form of single-crystal silicon for high-performance electronics on rubber substrates [J].

Khang, DY ;

Jiang, HQ ;

Huang, Y ;

Rogers, JA .

SCIENCE, 2006, 311 (5758) :208-212

[4] Mechanically flexible thin-film transistors that use ultrathin ribbons of silicon derived from bulk wafers [J].

Mack, S. ;

Meitl, M. A. ;

Baca, A. J. ;

Zhu, Z. -T. ;

Rogers, J. A. .

APPLIED PHYSICS LETTERS, 2006, 88 (21)

[5] An ink-jet-deposited passive component process for RFID [J].

Redinger, D ;

Molesa, S ;

Yin, S ;

Farschi, R ;

Subramanian, V .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) :1978-1983

← 1 →