Electronic structure and ferromagnetism of transition-metal-impurity-doped zinc oxide

被引:158
作者
Sato, K [1 ]
Katayama-Yoshida, H [1 ]
机构
[1] Osaka Univ, Inst Sci & Ind Res, Dept Condensed Matter Phys, Osaka 5670047, Japan
基金
日本学术振兴会;
关键词
ZnO; transition metal; ferromagnetism; double-exchange mechanism;
D O I
10.1016/S0921-4526(01)00834-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The ferromagnetism in ZnO-based diluted magnetic semiconductors (DMSs) is investigated based on the first principles calculations. The electronic structure of a ZnO-based DMS is calculated using the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local density approximation. The stability of the ferromagnetic state compared with that of the spin-glass state is systematically investigated by calculating the total energy difference between them. It is found that the ferromagnetic state is more stable than the spin-glass state in V-, Cr-, Fe-, Co- or Ni-doped ZnO without any additional carrier doping treatments. In the case of the Mn-doped ZnO, the spin-glass state is stable at a carrier concentration of 0%, but the ferromagnetic state is stabilized by the hole doping treatment. Analyzing the calculated density of states, it is proposed that the origin of the stabilization of the ferromagnetism is a double-exchange mechanism. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:904 / 907
页数:4
相关论文
共 19 条
[2]  
AKAI H, 1990, PROG THEOR PHYS SUPP, P11, DOI 10.1143/PTPS.101.11
[3]   Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As [J].
Akai, H .
PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3002-3005
[4]   Material design of half-metallic zinc-blende CrAs and the synthesis by molecular-beam epitaxy [J].
Akinaga, H ;
Manago, T ;
Shirai, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (11B) :L1118-L1120
[5]   Magneto-optical properties of ZnO-based diluted magnetic semiconductors [J].
Ando, K ;
Saito, H ;
Jin, ZW ;
Fukumura, T ;
Kawasaki, M ;
Matsumoto, Y ;
Koinuma, H .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :7284-7286
[6]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[7]   Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films [J].
Jin, ZW ;
Murakami, M ;
Fukumura, T ;
Matsumoto, Y ;
Ohtomo, A ;
Kawasaki, M ;
Koinuma, H .
JOURNAL OF CRYSTAL GROWTH, 2000, 214 :55-58
[8]   p-type electrical conduction in ZnO thin films by Ga and N codoping [J].
Joseph, M ;
Tabata, H ;
Kawai, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A) :L1205-L1207
[9]   Transport properties and origin of ferromagnetism in (Ga,Mn)As [J].
Matsukura, F ;
Ohno, H ;
Shen, A ;
Sugawara, Y .
PHYSICAL REVIEW B, 1998, 57 (04) :R2037-R2040
[10]   Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide [J].
Matsumoto, Y ;
Murakami, M ;
Shono, T ;
Hasegawa, T ;
Fukumura, T ;
Kawasaki, M ;
Ahmet, P ;
Chikyow, T ;
Koshihara, S ;
Koinuma, H .
SCIENCE, 2001, 291 (5505) :854-856