Surface diffusion kinetics on amorphous silicon

被引：12

作者：

Dalton, AS ^{[1
]}

Llera-Hurlburt, D ^{[1
]}

Seebauer, EG ^{[1
]}

机构：

[1] Univ Illinois, Dept Chem Engn, Urbana, IL 61801 USA

来源：

SURFACE SCIENCE | 2001年 / 494卷 / 01期

基金：

美国国家科学基金会;

关键词：

silicon; amorphous surfaces; diffusion and migration; surface diffusion; computer simulations; models of surface kinetics;

D O I：

10.1016/S0039-6028(01)01493-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We obtain parameters for self-diffusion on the amorphous silicon surface by reanalyzing kinetic data for the formation of hemispherical grained silicon (HSG) previously published by another laboratory [J. Vac. Sci. Technol. A11 (1993) 2950]. Our mathematical model for individual HSG grain growth permits extraction of diffusivities for overall mass transport, and to our knowledge yields the first numbers for temperature-dependent self-diffusion on any amorphous surface. The activation energy for mass transfer diffusion is lower than that previously measured for crystalline Si(111). (C) 2001 Elsevier Science B.V, All rights reserved.

引用

页码：L761 / L766

页数：6

共 29 条

[1] Surface diffusivities and reaction rate constants: Making a quantitative experimental connection [J].