Extreme UV lithography: A new laser plasma target concept and fabrication of multilayer reflection masks

被引：10

作者：

Bijkerk, F

Shmaenok, LA

Louis, E

Voorma, HJ

Koster, NB

Bruineman, C

Bastiaensen, RKFJ

vanderDrift, EWJM

Romijn, J

deGroot, LEM

Rousseeuw, BAC

Zijlstra, T

Platonov, YY

Salashchenko, NN

机构：

[1] FOM-Inst. Plasma Phys. Rijnhuizen, 3439 MN Nieuwegein

[2] Delft Inst. Microlectron. S., Delft

[3] Inst. for Physics of Microstructures, Nizhny Novgorod

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期

关键词：

EUVL; laser plasma source; plasma debris; fast rotating target; Mo-Si coatings; reflection mask fabrication;

D O I：

10.1016/0167-9317(95)00222-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results are reported on the development of a laser plasma source and the fabrication of multilayer reflection masks for extreme ultra-violet lithography (EUVL). A new concept of a target for a laser plasma source is presented including experimental evidence of elimination of macro debris particles from the source. Concerning the fabrication of reflection masks, a new method is described involving a two-layer absorber system protecting the Mo-Si structure against etching damage.

引用

页码：183 / 186

页数：4

共 11 条

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