Fundamental Resolution Limits during Electron-Induced Direct-Write Synthesis

被引：35

作者：

Arnold, Georg ^{[1
]}

Timilsina, Rajendra ^{[2
]}

Fowlkes, Jason ^{[3
]}

Orthacker, Angelina ^{[4
]}

Kothleitner, Gerald ^{[1
,4
]}

Rack, Philip D. ^{[2
,3
]}

Plank, Harald ^{[1
,4
]}

机构：

[1] Graz Univ Technol, Inst Electron Microscopy & Nanoanal, A-8010 Graz, Austria

[2] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[4] Graz Ctr Electron Microscopy, A-8010 Graz, Austria

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 10期

基金：

美国国家科学基金会;

关键词：

focused electron-beam-induced deposition; platinum; nanofabrication; Monte Carlo simulations; atomic force microscopy; transmission electron microscopy; BEAM-INDUCED DEPOSITION; SIMULATION; MOLECULE; REPAIR;

D O I：

10.1021/am5008003

中图分类号：

TB3 [工程材料学];

学科分类号：

082905 [生物质能源与材料];

摘要：

In this study, we focus on the resolution limits for quasi 2-D single lines synthesized via focused electron-beam-induced direct-write deposition at 5 and 30 keV in a scanning electron microscope. To understand the relevant proximal broadening effects, the substrates were thicker than the beam penetration depth and we used the MeCpPt(IV)Me-3 precursor under standard gas injection system conditions. It is shown by experiment and simulation how backscatter electron yields increase during the initial growth stages which broaden the single lines consistent with the backscatter range of the deposited material. By this it is shown that the beam diameter together with the evolving backscatter radius of the deposit material determines the achievable line widths even for ultrathin deposit heights in the sub-5-nm regime.

引用

页码：7380 / 7387

页数：8

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