Processing and characterization of Pb(Zr, Ti)O3 thick films on platinum-coated silicon substrate derived from sol-gel deposition

被引:15
作者
Wang, ZH [1 ]
Zhao, CL [1 ]
Zhu, WG [1 ]
Tan, OK [1 ]
Liu, WG [1 ]
Yao, X [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore
关键词
ferroelectric thick films; sol-gel; PZT; slurry;
D O I
10.1016/S0254-0584(02)00033-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Crack-free Pb(Zr, Ti)O-3 films up to 20 mum thick have been prepared on the Pt/Ti/SiO2/Si substrate using a novel sol-gel route. In this route, surface-modified fine PZT crystalline particles are well dispersed in a sol-gel precursor solution to form uniform slurry. The slurry is then spin-coated onto a substrate, pre-heated and annealed at relatively low temperatures as the conventional sol-gel process. The surface modification of the added particles, microstructure and the crystallization process of the films have been investigated using field emission scanning electron microscopy (FESEM) and the X-ray diffraction (XRD). Finally, the ferroelectric and dielectric properties of the thick films have been reported. The novel route is promising to integrate ferroelectric thick films on the silicon substrate for potential applications in microelectromechanical systems (MEMSs). (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:71 / 75
页数:5
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