Processing of PZT piezoelectric thick films on silicon for microelectromechancial systems

被引:80
作者
Beeby, SP [1 ]
Blackburn, A [1 ]
White, NM [1 ]
机构
[1] Univ Southampton, Dept Elect & Comp Sci, Southampton SO17 1BJ, Hants, England
关键词
D O I
10.1088/0960-1317/9/3/302
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thick-film printed lead zirconate titanate (PZT) structures can be combined with micromachined silicon structures and offer relatively large actuation forces compared to alternative techniques. This paper describes the initial investigation into the compatibility issues of micromachining silicon wafers with PZT layers printed on the surface. In assesses the effect of many standard photolithography and micromachining upon the printed PZT layer. In particular the adhesion of the printed layer to the substrate and its internal structure have been studied after exposure to each process. Standard photolithography using positive resists has been found to destroy the adhesion of the platinum electrode and an alternative masking technique using a thick-film printed dielectric polymer has been developed. Aluminium top electrodes have been fabricated using this masking technique combined with ion beam milling. Finally many standard micromachining etching processes have been carried out on a range of silicon substrates incorporating platinum electrode/thick film PZT structures. Wet silicon and silicon dioxide etches were found to be unsuitable since they also attacked the adhesion of the bottom electrode. Plasma etching processes appear to be well suited for the combination of materials since there is a wide range of etches available that do not affect the PZT. These can therefore be used for the micromachining of the silicon substrate after thick-film processing greatly expanding the range of applications suited to this combination of technologies.
引用
收藏
页码:218 / 229
页数:12
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