Thick-film printing of PZT onto silicon

被引：71

作者：

Maas, R ^{[1
]}

Koch, M ^{[1
]}

Harris, NR ^{[1
]}

White, NM ^{[1
]}

Evans, AGR ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT ELECT & COMP SCI,SOUTHAMPTON 5017 1BJ,HANTS,ENGLAND

来源：

MATERIALS LETTERS | 1997年 / 31卷 / 1-2期

关键词：

PZT; piezoelectric; screen printing; thick film; silicon; diffusion; barrier layer;

D O I：

10.1016/S0167-577X(96)00249-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes a way of screen-printing PZT (lead-zirconate-titanate) onto silicon substrates. Initial experiments of printing a PZT-ink on a native oxide-covered Si-substrate showed contamination of the silicon substrate by lead diffusion during the firing stage of the film. This occurred also on thin-film deposited silicon oxide or silicon nitride layers. The effect of this is potentially catastrophic as conduction occurs between areas required to be electrically isolated by the thin film. The problem was solved by using a screen-printed barrier layer of IP211 (Heraeus), which also reduces the diffusion and prevents the conduction.

引用

页码：109 / 112

页数：4