Stability of pentacene organic field effect transistors with a low-k polymer/high-k oxide two-layer gate dielectric

被引:38
作者
Deman, AL [1 ]
Tardy, J [1 ]
机构
[1] Ecole Cent Lyon, CNRS, UMR 5512, LEOM,Lab Elect Opt & Microsyst, F-69134 Ecully, France
来源
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2006年 / 26卷 / 2-3期
关键词
organic field effect transistors; gate dielectric; stability; bias stress;
D O I
10.1016/j.msec.2005.10.030
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reports on the processing and the characterization of pentacene organic field effect transistors (OFETs) with a two-layer gate dielectric consisting of a polymer (PMMA) on a high-k oxide (Ta2O5). This dielectric stack has been designed in view to combine low voltage operating devices, by the use of a high-k oxide which increases the charge in the accumulation channel and the gate capacitance, and highly stable devices which generally could be achieved with polymer dielectrics but not necessarily with strongly polar high-k oxides. Bi-layer dielectric devices were compared to those with only Ta2O5 or PMMA gate insulators. Bias stress at room temperature was used to assess the electrical stability. A very low operating voltage was achieved with Ta2O5 but these devices exhibit hysteresis and degraded characteristics upon bias stress. OFETs with PMMA revealed very stable but operate at rather a high voltage due to the low dielectric constant of PMMA. Reasonably stable devices operating at about 10 V could have been obtained with PMMA/Ta2O5 two-layer dielectric. The origin of observed threshold voltage shift and mobility decrease upon bias stress are discussed. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:421 / 426
页数:6
相关论文
共 24 条
  • [1] Organic field-effect transistors with high mobility based on copper phthalocyanine
    Bao, Z
    Lovinger, AJ
    Dodabalapur, A
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (20) : 3066 - 3068
  • [2] Pentacene-based radio-frequency identification circuitry
    Baude, PF
    Ender, DA
    Haase, MA
    Kelley, TW
    Muyres, DV
    Theiss, SD
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (22) : 3964 - 3966
  • [3] Detection and titration of ozone using metallophthalocyanine based field effect transistors
    Bouvet, M
    Leroy, A
    Simon, J
    Tournilhac, F
    Guillaud, G
    Lessnick, P
    Maillard, A
    Spirkovitch, S
    Debliquy, M
    de Haan, A
    Decroly, A
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2001, 72 (01) : 86 - 93
  • [4] Electronic sensing of vapors with organic transistors
    Crone, B
    Dodabalapur, A
    Gelperin, A
    Torsi, L
    Katz, HE
    Lovinger, AJ
    Bao, Z
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (15) : 2229 - 2231
  • [5] DEMAN AL, 2005, EUR C EL ECME 2005 B
  • [6] Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators
    Dimitrakopoulos, CD
    Purushothaman, S
    Kymissis, J
    Callegari, A
    Shaw, JM
    [J]. SCIENCE, 1999, 283 (5403) : 822 - 824
  • [7] Bias-induced threshold voltages shifts in thin-film organic transistors
    Gomes, HL
    Stallinga, P
    Dinelli, F
    Murgia, M
    Biscarini, F
    de Leeuw, DM
    Muck, T
    Geurts, J
    Molenkamp, LW
    Wagner, V
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (16) : 3184 - 3186
  • [8] Horowitz G, 1998, ADV MATER, V10, P365, DOI 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO
  • [9] 2-U
  • [10] Organic thin-film transistors on a plastic substrate with anodically oxidized high-dielectric-constant insulators
    Iino, Y
    Inoue, Y
    Fujisaki, Y
    Fujikake, H
    Sato, H
    Kawakita, M
    Tokito, S
    Kikuchi, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (01): : 299 - 304