Organic thin-film transistors on a plastic substrate with anodically oxidized high-dielectric-constant insulators
被引:71
作者:
Iino, Y
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NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
Iino, Y
[1
]
Inoue, Y
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NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
Inoue, Y
[1
]
Fujisaki, Y
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NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
Fujisaki, Y
[1
]
Fujikake, H
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NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
Fujikake, H
[1
]
Sato, H
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NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
Sato, H
[1
]
Kawakita, M
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NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
Kawakita, M
[1
]
Tokito, S
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NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
Tokito, S
[1
]
Kikuchi, H
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NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, JapanNHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
Kikuchi, H
[1
]
机构:
[1] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
2003年
/
42卷
/
01期
关键词:
organic transistors;
thin-film transistors;
anodization;
Ta2O5;
gate insulator with high dielectric constant;
plastic substrate;
D O I:
10.1143/JJAP.42.299
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Organic thin-film transistors (OTFTs) which use Ta2O5 as the gate insulators were fabricated on plastic substrates. The gate insulators were synthesized by anodizing the gate electrodes fabricated as stacked structures of aluminum (At) and tantalum (Ta) at room temperature. The stacked structure suppressed the stress at the interface between the substrate and metal electrodes so that cracks on Ta could be avoided. The organic semiconductor pentacene was used as the active layer on the gate insulator. The OTFTs showed the best performance at an operating voltage of 5 V and a good field-effect mobility of 0.36 CM2/Vs on plastic substrates. The structural order of the pentacene in the film and the temperature dependence of the leakage current in the insulator were also studied to improve the device characteristics.
机构:
IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAIBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
Dimitrakopoulos, CD
Purushothaman, S
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机构:
IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAIBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
Purushothaman, S
Kymissis, J
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机构:
IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAIBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
Kymissis, J
Callegari, A
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机构:
IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAIBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
Callegari, A
Shaw, JM
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机构:
IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAIBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
机构:
IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAIBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
Dimitrakopoulos, CD
Purushothaman, S
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h-index: 0
机构:
IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAIBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
Purushothaman, S
Kymissis, J
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h-index: 0
机构:
IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAIBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
Kymissis, J
Callegari, A
论文数: 0引用数: 0
h-index: 0
机构:
IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAIBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
Callegari, A
Shaw, JM
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h-index: 0
机构:
IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USAIBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA