Electronic properties of structural defects at the MgO (001) surface

被引:131
作者
Sushko, PV [1 ]
Gavartin, JL [1 ]
Shluger, AL [1 ]
机构
[1] UCL, Dept Phys & Astron, London WC1E 6BT, England
关键词
D O I
10.1021/jp0129481
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have calculated the ionization energies, electron affinities, optical excitation energies, and relaxed electron and hole states at comers, kinks, and steps of the MgO (001) surface. The calculations are performed using an embedded cluster model and density functional theory and take into account the long-range surface polarization. The extent of localization of electronic states associated with specific structural defects at the surface is studied by the participation function method. The positions of energy levels of the surface sites with respect to the top of the surface valence band and the vacuum level are determined. The results demonstrate the existence of deep and shallow electron traps at steps, comers, and kinks of the MgO (001) surface, and establish direct correlation between common surface features and their spectroscopic and other electronic properties.
引用
收藏
页码:2269 / 2276
页数:8
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