Epitaxial stabilization of hexagonal RMnO3 (R = Eu-Dy) manganites

被引：35

作者：

Bosak, AA

Dubourdieu, C

Sénateur, JP

Gorbenko, OY

Kaul, AR

机构：

[1] Inst Natl Polytech Grenoble, Mat & Genie Phys Lab, F-38402 St Martin Dheres, France

[2] Moscow MV Lomonosov State Univ, Dept Chem, Coordinat Chem Labs, Moscow 119899, Russia

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2002年 / 12卷 / 04期

关键词：

D O I：

10.1039/b110870k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Epitaxial thin films of RMnO3 (R = Sm, Eu, Gd, Dy) have been prepared using liquid injection MOCVD. The formation of a high-temperature hexagonal modification for DyMnO3 and bulk hexagonal EuMnO3 and GdMnO3, which does not exist for the bulk compounds, has been observed on ZrO2 (Y2O3) (111) substrates at 900 degreesC due to epitaxial stabilization.

引用

页码：800 / 801

页数：2

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