Device physics - Memories are made of ...

被引：141

作者：

Kingon, A ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

NATURE | 1999年 / 401卷 / 6754期

关键词：

D O I：

10.1038/44307

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

One elusive goal in semiconductor technology is realizing the ideal nonvolatile memory -- that is, one that retains information when the power is switched off without battery back-up. In this context, so-called ferroelectric random access memories are promising. Work on a particular form of ferroelectric material provides encouraging evidence that it has the desired properties for nonvolatile memory.

引用

页码：658 / 659

页数：2

共 4 条

[1] Scaling effect on statistical behavior of switching parameters of ferroelectric capacitors [J].

Gruverman, A .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1452-1454

[2] Phase development and electrical property analysis of pulsed laser deposited Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) epitaxial thin films [J].

Maria, JP ;

Hackenberger, W ;

Trolier-McKinstry, S .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) :5147-5154

[3]

Mitsui T., 1981, LANDOLTBORNSTEIN, V16

[4] Lanthanum-substituted bismuth titanate for use in non-volatile memories [J].

Park, BH ;

Kang, BS ;

Bu, SD ;

Noh, TW ;

Lee, J ;

Jo, W .

NATURE, 1999, 401 (6754) :682-684

← 1 →