Ohmic contact to p-ZnSe and p-ZnMgSSe

被引：9

作者：

Chang, SJ

Chen, WR

Su, YK

Tu, RC

Lan, WH

Chang, H

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Chung Shan Inst Sci & Technol, Lungtan 32500, Taiwan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 15期

关键词：

D O I：

10.1049/el:19990835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have deposited Ge/Cu onto p-ZnSe epitaxial layers, and found that the specific contact resistance is 2 x 10(-4)Omega cm(2) after a simple voltage stress. The authors have also deposited Ge3Cu/pt/Au onto p-ZnSe and p-ZnMgSSe, and found that the specific contact resistance is 8 x 10(-5) Omega cm(2) and 3.8 x 10(-5) Omega cm(2) for the as-deposited Cu3Ge/Pt/Au contacts on top of the p-ZnSe and pZnMgSSe, respectively. It was also found that the Cu3Ge/Pt/Au on p-ZnSe is much more stable than the Cu3Ge/Pt/Au on p-ZnMgSSe.

引用

页码：1280 / 1281

页数：2

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