OHMIC CONTACTS TO P-TYPE ZNSE USING ZNTE/ZNSE MULTIQUANTUM WELLS

被引：109

作者：

HIEI, F

IKEDA, M

OZAWA, M

MIYAJIMA, T

ISHIBASHI, A

AKIMOTO, K

机构：

[1] Sony Corporation Research Center, Hodogayaku, Yokohama 240

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

OHMIC CONTACTS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Employing p+-ZnTe/ZnSe quantum wells whose sub-bands are aligned in energy so that resonant tunnelling of holes can occur through the multiquantum well region, nonalloyed ohmic contacts to p-type ZnSe have been realised. A specific contact resistance as low as 5.0 x 10(-2) OMEGA cm2 has been achieved for N-doped ZnSe with a hole concentration of 7.0 x 10(16) cm-3.

引用

页码：878 / 879

页数：2

共 5 条

[1] GRADED BAND-GAP OHMIC CONTACT TO P-ZNSE
FAN, Y
HAN, J
HE, L
SARAIE, J
GUNSHOR, RL
HAGEROTT, M
JEON, H
NURMIKKO, AV
HUA, GC
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (26) : 3160 - 3162
[2] BLUE-GREEN LASER-DIODES
HAASE, MA
QIU, J
DEPUYDT, JM
CHENG, H
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1272 - 1274
[3] BLUE AND GREEN DIODE-LASERS IN ZNSE-BASED QUANTUM-WELLS
JEON, H
DING, J
NURMIKKO, AV
XIE, W
GRILLO, DC
KOBAYASHI, M
GUNSHOR, RL
HUA, GC
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (17) : 2045 - 2047
[4] IMPROVED OHMIC CONTACTS FOR P-TYPE ZNSE AND RELATED P-ON-N DIODE STRUCTURES
LANSARI, Y
REN, J
SNEED, B
BOWERS, KA
COOK, JW
SCHETZINA, JF
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2554 - 2556
[5] AU(PT)PD OHMIC CONTACTS TO P-ZNTE
OZAWA, M
HIEI, F
ISHIBASHI, A
AKIMOTO, K
[J]. ELECTRONICS LETTERS, 1993, 29 (05) : 503 - 505

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