IMPROVED OHMIC CONTACTS FOR P-TYPE ZNSE AND RELATED P-ON-N DIODE STRUCTURES

被引：90

作者：

LANSARI, Y

REN, J

SNEED, B

BOWERS, KA

COOK, JW

SCHETZINA, JF

机构：

[1] Department of Physics, North Carolina State University, Raleigh

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 21期

关键词：

D O I：

10.1063/1.108124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The problem of obtaining ohmic contacts for p-type ZnSe is related to the deep valence band of ZnSe. We have addressed this problem by employing an epitaxial layer of the semimetal HgSe to decrease the interfacial energy barrier, or valence band offset, to about 0.6 eV. This has resulted in improved ohmic contacts for p-type ZnSe films and related diode structures.

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页码：2554 / 2556

页数：3

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