ZNSE BASED MULTILAYER PN JUNCTIONS AS EFFICIENT LIGHT-EMITTING-DIODES FOR DISPLAY APPLICATIONS

被引：60

作者：

JEON, H

DING, J

NURMIKKO, AV

XIE, W

KOBAYASHI, M

GUNSHOR, RL

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

[2] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.106496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

引用

页码：892 / 894

页数：3

共 14 条

[1]

CHENG H, 1988, J CRYST GROWTH, V95, P512

[2] ROOM-TEMPERATURE EXCITON ABSORPTION IN (ZN,CD)SE/ZNSE QUANTUM-WELLS AT BLUE-GREEN WAVELENGTHS [J].