AU(PT)PD OHMIC CONTACTS TO P-ZNTE

被引：46

作者：

OZAWA, M

HIEI, F

ISHIBASHI, A

AKIMOTO, K

机构：

[1] SONY Corporation Research Center, Yokohama 240

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 05期

关键词：

OHMIC CONTACTS; II-VI SEMICONDUCTORS;

D O I：

10.1049/el:19930337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au(Pt)Pd ohmic contacts to p-ZnTe are reported, with a determination of the optimum annealing temperature and the optimum Pd layer thickness. The specific contact resistance, measured by the transmission line method, was as low as 5 x 10(-6) OMEGA cm-2. This value of the specific contact resistance is two orders of magnitude lower than that of Au or Au/Pt contact to p-ZnTe.

引用

页码：503 / 505

页数：3

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