PHOTOEMISSION-STUDIES OF INTERFACE CHEMISTRY AND SCHOTTKY BARRIERS FOR ZNSE(100) WITH TI, CO, CU, PD, AG, AU, CE, AND AL

被引：46

作者：

VOS, M ^{[1
]}

XU, F ^{[1
]}

ANDERSON, SG ^{[1
]}

WEAVER, JH ^{[1
]}

CHENG, H ^{[1
]}

机构：

[1] THREE M CO,THREE M CTR,ST PAUL,MN 55144

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.39.10744

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10744 / 10752

页数：9

共 54 条

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[7] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES
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[9] Cardona M., 1978, PHOTOEMISSION SOLIDS
[10] GROWTH OF UNDOPED ZNSE ON (100) GAAS BY MOLECULAR-BEAM EPITAXY - AN INVESTIGATION OF THE EFFECTS OF GROWTH TEMPERATURE AND BEAM PRESSURE RATIO
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) : 4756 - 4762

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