PHOTOEMISSION-STUDIES OF REACTIVE DIFFUSION AND LOCALIZED DOPING AT II-VI-COMPOUND SEMICONDUCTOR-METAL INTERFACES

被引:8
作者
BRILLSON, LJ [1 ]
BRUCKER, CF [1 ]
STOFFEL, NG [1 ]
KATNANI, A [1 ]
DANIELS, R [1 ]
MARGARITONDO, G [1 ]
机构
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
来源
PHYSICA B & C | 1983年 / 117卷 / MAR期
关键词
D O I
10.1016/0378-4363(83)90672-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:848 / 850
页数:3
相关论文
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