Microcrystalline silicon grown by VHF PECVD and the fabrication of solar cells

被引：14

作者：

Chen, Yongsheng ^{[1
,2
]}

Wang, Jianhua ^{[3
]}

Lu, Jingxiao ^{[1
]}

Zheng, Wen ^{[1
]}

Gu, Jinhua ^{[1
]}

Yang, Shi-e ^{[1
]}

Gao, Xiaoyong ^{[1
]}

机构：

[1] Zhengzhou Univ, Dept Phys, Key Lab Mat Phys, Zhengzhou 450052, Henan, Peoples R China

[2] Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China

[3] Wuhan Inst Technol, Dept Mat Sci & Engn, Wuhan 430073, Peoples R China

来源：

SOLAR ENERGY | 2008年 / 82卷 / 11期

关键词：

Microcrystalline silicon; Solar cells; VHF PECVD; AFM;

D O I：

10.1016/j.solener.2008.01.007

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Intrinsic microcrystalline silicon has been deposited by very high frequency plasma enhanced chemical vapor deposition technique at frequency of 75 MHz. Different gas mixtures of silane and hydrogen were utilized, and the evolution of microstructure and phase in film were studied, while keeping the substrate temperature at 200 degrees C and the chamber pressure at 0.5 Torr. Optirnised material was inserted in p-i-n solar cells: preliminary efficiency of 5.5% was reached for 1 mu m-thick solar cells with the V-oc around 0.6 V. (C) 2008 Published by Elsevier Ltd.

引用

页码：1083 / 1087

页数：5

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