The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma

被引：19

作者：

Smets, A. H. M. ^{[1
]}

Kondo, M. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

silicon; plasma deposition; microcrystallinity; FTIR measurements; Raman spectroscopy;

D O I：

10.1016/j.jnoncrysol.2005.10.073

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The high rate deposition of microcrystalline silicon (pc-Si:H) by means of the novel multi-hole-cathode very high frequency (MHC-VHF) plasma technique has been studied in the high-pressure depletion region (9.3 Torr). A distinct relationship between vacancy incorporation, the crystalline volume fraction and a qualitative measurement of the energy of the ions bombarding the substrate has been found. The observed relation is explained with the help of an ion-phase-diagram: we claim that the most energetic ions, containing at least one silicon atom, are responsible for the local amorphization of the mu c-Si:H films via the ion induced Si bulk displacement mechanism. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：937 / 940

页数：4

共 13 条

[1] Combined effect of electrode gap and radio frequency on power deposition and film growth kinetics in SiH4/H2 discharges [J].

Amanatides, E ;

Mataras, D ;

Rapakoulias, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (01) :68-75

[2]

Cabarrocas PRI, 2002, PURE APPL CHEM, V74, P359

[3] Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films [J].

Hamers, EAG ;

Morral, AFI ;

Niikura, C ;

Brenot, R ;

Cabarrocas, PRI .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) :3674-3688

[4] Ion doses for low-energy ion-assist applications [J].

Kaufman, HR ;

Harper, JME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (01) :221-224

[5]

Ma ZQ, 1998, PHYS STATUS SOLIDI A, V169, P239, DOI 10.1002/(SICI)1521-396X(199810)169:2<239::AID-PSSA239>3.0.CO

[6]

2-F

[7] Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasma [J].

Niikura, C ;

Kondo, M ;

Matsuda, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :42-46

[8] High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma [J].

Niikura, C ;

Itagaki, N ;

Kondo, M ;

Kawai, Y ;

Matsuda, A .

THIN SOLID FILMS, 2004, 457 (01) :84-89

[9] Molecular dynamics simulation of ion bombardment on hydrogen terminated Si(001)2 X 1 surface [J].

Satake, K ;

Graves, DB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (02) :484-490

[10] A highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network [J].

Shimizu, S ;

Kondo, M ;

Matsuda, A .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)

← 1 2 →