High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma

被引：43

作者：

Niikura, C

Itagaki, N

Kondo, M

Kawai, Y

Matsuda, A

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Kasuga, Fukuoka 8168580, Japan

来源：

THIN SOLID FILMS | 2004年 / 457卷 / 01期

关键词：

plasma processing and deposition; silicon;

D O I：

10.1016/j.tsf.2003.12.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We developed a novel technique for high-rate growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a novel cathode with interconnected multi-holes, which leads to generate uniformly flat-distributed stable high-density-plasma spots near cathode-surface. Improvement of quality of high-rate grown films was discussed, and microcrystalline silicon films with a low defect density of 1.2 x 10(16) cm(-3) were obtained at a high rate of 7.7 nm/s, demonstrating the efficient gas dissociation and the effectiveness of the novel cathode. The spatial distribution of plasma at cathode-surface holes was analyzed using optical emission spectroscopy for further optimization of plasma conditions. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：84 / 89

页数：6

共 8 条

[1] High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma [J].