Growth of device grade μc-Si film at over 50 A/s using PECVD

We have developed high-rate deposition technique for device quality microcrystalline silicon using plasma-enhanced chemical vapor deposition in combination with triode technique and shower-head cathode under high-pressure-depletion conditions. A shower-head cathode improves the uniformity of film quality as well as thickness in high deposition rate regime over 50 Angstrom/s. A mesh electrode is placed near substrates to suppress ion-bombardment to the film growing surface. In high input power regime, a hollow-cathode effect facilitates microcrystalline silicon growth at over 50 Angstrom/s with good crystallinity, good photosensitivity and low defect density. A preliminary result of solar cell device using this method is demonstrated. (C) 2002 Elsevier Science B.V. All rights reserved.