Microcrystalline n-i-p solar cells deposited at 10 Å/s by VHF-GD

被引:30
作者
Feitknecht, L
Kluth, O
Ziegler, Y
Niquille, X
Torres, P
Meier, J
Wyrsch, N
Shah, A
机构
[1] IMT, CH-2000 Neuchatel, Switzerland
[2] FZJ, Inst Thin Film & Ion Technol, D-52425 Julich, Germany
关键词
microcrystalline silicon; high deposition rate; thin-film n-i-p solar cell; VHF-GD;
D O I
10.1016/S0927-0248(00)00200-2
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In the present paper, we report on thin-film microcrystalline silicon solar cells grown at high deposition rates on back-reflectors with optimised light-scattering capabilities. A single-junction solar cell with a conversion efficiency of eta = 7.8% (2 mum thickness) was fabricated at a deposition rate of 7.4 Angstrom /s. Another microcrystalline cell was successfully implemented in a 'micromorph" tandem (i.e. a microcrystalline/amorphous tandem cell with n-i-p-n-i-p configuration); the resulting initial conversion efficiency was eta = 11.2%. A 4 mum thick single-junction cell at a deposition rate of 10 Angstrom /s and with a conversion efficiency of eta = 6.9% was fabricated on a non-optimised substrate. Special attention is drawn to near-infrared spectral response and interface optimisation. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:397 / 403
页数:7
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