High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma

被引：96

作者：

Fukawa, M ^{[1
]}

Suzuki, S ^{[1
]}

Guo, LH ^{[1
]}

Kondo, M ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Electrotech Lab, Thin Film Silicon Solar Cells Superlab, Tsukuba, Ibaraki 3058568, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 66卷 / 1-4期

关键词：

mu c-Si; VHF plasma; high-pressure depletion; high growth rate; pulse-modulation;

D O I：

10.1016/S0927-0248(00)00176-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The deposition of hydrogenated microcrystalline Si (muc-Si) at working pressure from 0.5 to 4 Torr was performed using a very-high-frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) method. Correlation of the growth rate and grain size with deposition parameters such as working pressure, silane flow rate, excitation frequency and input power were investigated. With increasing silane flow rate from 10 to 50 seem, the growth rate increased from 13 to 28 Angstrom /s keeping grain size at 300 Angstrom. It was also found that the growth rate strongly depended on configuration of gas injection. muc-Si him with the growth rate of 50 Angstrom /s at 250 degreesC was obtained by injecting the silane gas from near the cathode at an excitation frequency of 60 MHz, (C) 2001 Published by Elsevier Science B.V. All rights reserved.

引用

页码：217 / 223

页数：7

共 7 条

[1] IMPROVEMENT OF GRAIN-SIZE AND DEPOSITION RATE OF MICROCRYSTALLINE SILICON BY USE OF VERY HIGH-FREQUENCY GLOW-DISCHARGE [J].

FINGER, F ;

HAPKE, P ;

LUYSBERG, M ;

CARIUS, R ;

WAGNER, H ;

SCHEIB, M .

APPLIED PHYSICS LETTERS, 1994, 65 (20) :2588-2590

[2]

GUO L, 1998, JPN J APPL PHYS, V37, P1116

[3] WIDE-RANGE CONTROL OF CRYSTALLITE SIZE AND ITS ORIENTATION IN GLOW-DISCHARGE DEPOSITED MU-C-SI-H [J].

MATSUDA, A ;

KUMAGAI, K ;

TANAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (01) :L34-L36

[4] FORMATION KINETICS AND CONTROL OF MICROCRYSTALLITE IN MU-C-SI-H FROM GLOW-DISCHARGE PLASMA [J].

MATSUDA, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :767-774

[5] On the way towards high efficiency thin film silicon solar cells by the ''micromorph'' concept [J].

Meier, J ;

Torres, P ;

Platz, R ;

Dubail, S ;

Kroll, U ;

Selvan, JAA ;

Vaucher, NP ;

Hof, C ;

Fischer, D ;

Keppner, H ;

Shah, A ;

Ufert, KD ;

Giannoules, P ;

Koehler, J .

AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 :3-14

[6]

SAITO K, 1998, P 2 WORLD C PHOT SOL, P351

[7] Thin film poly-Si solar cell on glass substrate fabricated at low temperature [J].

Yamamoto, K ;

Yoshimi, M ;

Suzuki, T ;

Tawada, Y ;

Okamoto, Y ;

Nakajima, A .

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 :131-138

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