High rate deposition of microcrystalline silicon using conventional plasma-enhanced chemical vapor deposition

被引：204

作者：

Guo, LH ^{[1
]}

Kondo, M ^{[1
]}

Fukawa, M ^{[1
]}

Saitoh, K ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Electrotech Lab, Thin Film Si Solar Cells Superlab, Tsukuba, Ibaraki 305, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 10A期

关键词：

microcrystalline silicon; plasma-enhanced chemical vapor deposition (PECVD); deposition rate; crystallinity; hydrogen dilution; optical emission spectroscopy (OES);

D O I：

10.1143/JJAP.37.L1116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition of hydrogenated microcrystalline silicon (mu c-Si:H) at a relatively high working pressure is performed using a conventional radio-frequency plasma-enhanced chemical vapor deposition method. Correlation of the deposition rate and crystallinity with deposition parameters, such as working pressure, Now rate, dilution ratio and input RF power, are studied. It was found that the deposition rate exhibits a maximum at around 4 Torr and that the crystallinity of films decreases monotonically with increasing pressure. The combination of SiH4 depletion and high working pressure in the plasma is necessary to improve the crystallinity of films deposited at a high rate. Consequently, a high deposition rate of 9.3 Angstrom/s is achieved with high crystallinity and low defect density.

引用

页码：L1116 / L1118

页数：3

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