Fast deposition of microcrystalline silicon using high-density SiH4 microwave plasma

被引：38

作者：

Shirai, H ^{[1
]}

Sakuma, Y ^{[1
]}

Moriya, Y ^{[1
]}

Fukai, C ^{[1
]}

Ueyama, H ^{[1
]}

机构：

[1] Nihon Koshuha Co Ltd, Midori Ku, Yokohama, Kanagawa 2260011, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 12A期

关键词：

high-density plasma; spokewise antenna; microwave plasma; mu c-Si : H; optical emission spectroscopy (OES); fast deposition; SiH4;

D O I：

10.1143/JJAP.38.6629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel microwave discharge utilizing a spokewise antenna was applied for the fast deposition of hydrogenated microcrystalline silicon (mu c-Si:H) film from SIH4 and Ar without the Hz dilution method. Systematic deposition studies were employed with total pressure, H-2 dilution ratio and now rate of SIH4, Fr[SiH4], as variables, combined with optical emission spectroscopy (OES) and Langmuir probe characterizations. It was found that the deposition rate exhibits a maximum at 40-50 mTorr at the axial distance of 10cm from the quartz glass plate and the film crystallinity strongly depend on the: total pressure. Correlation among OES signal intensity, SiH, the intensity ratio, I-H alpha/I-Si*, deposition rare and film crystallinity were demonstrated. By combining the SiH4 depletion and lower pressure conditions, a high deposition rate of 40 Angstrom/s was achieved in mu c-Si:H growth with high crystallinity and photosensitivity from SiH4 and Ar plasma.

引用

页码：6629 / 6635

页数：7

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