Annealing effects on lattice-strain-relaxed In0.5Al0.5As/In0.5Ga0.5As heterostructures grown on GaAs substrates

被引：15

作者：

Mishima, T ^{[1
]}

Kudo, M ^{[1
]}

Kasai, J ^{[1
]}

Higuchi, K ^{[1
]}

Nakamura, T ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

MBE; InGaAs; strain-relax; anneal; mobility; photoluminescence; metamorphic;

D O I：

10.1016/S0022-0248(98)01338-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-temperature (600 degrees C) annealing, done to improve the electrical and optical qualities of lattice-strain-relaxed In0.5Al0.5As/In0.5Ga0.5As heterostructures grown on GaAs substrates at low temperatures, significantly improved the Hall mobilities of a n-In0.5Ga0.5As:Si layer, a n-In0.5Al0.5As:Si layer and a modulation-doped structure, but only slightly reduced sheet electron densities, if at all. This is in contrast to previous reports on fluorine termination of Si donors, which described significant degradation of electrical properties. The annealed single-quantum-well layer samples showed a photoluminescence intensity double that of the as-grown samples while maintaining the same line widths. These results suggest that the annealing did not increase the number of lattice-misfit dislocations, and transmission-electron microscopy and high-resolution photoluminescence microscopy confirmed this. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：271 / 275

页数：5

共 13 条

[1] STRAIN RELAXATION OF COMPOSITIONALLY GRADED INXGA1-XAS BUFFER LAYERS FOR MODULATION-DOPED IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES [J].

CHANG, JCP ;

CHEN, JH ;

FERNANDEZ, JM ;

WIEDER, HH ;

KAVANAGH, KL .

APPLIED PHYSICS LETTERS, 1992, 60 (09) :1129-1131

[2] LATTICE-MISMATCHED IN0.53GA0.47AS/IN0.52AL0.48AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS ON GAAS - MOLECULAR-BEAM EPITAXIAL-GROWTH AND DEVICE PERFORMANCE [J].

CHANG, K ;

BHATTACHARYA, P ;

LAI, R .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (07) :3323-3327

[3] COMPOSITION DEPENDENT TRANSPORT-PROPERTIES OF STRAIN RELAXED INXGA1-XAS(X-LESS-THAN-OR-EQUAL-TO-0.45) EPILAYERS [J].

CHEN, JH ;

FERNANDEZ, JM ;

WIEDER, HH .

APPLIED PHYSICS LETTERS, 1992, 61 (09) :1116-1118

[4]

FISCHERCOLBRIE A, 1993, J ELECT MAT, V22, pA2

[5] THERMAL-STABILITY OF ALINAS/GAINAS/INP HETEROSTRUCTURES [J].

HAYAFUJI, N ;

YAMAMOTO, Y ;

YOSHIDA, N ;

SONODA, T ;

TAKAMIYA, S ;

MITSUI, S .

APPLIED PHYSICS LETTERS, 1995, 66 (07) :863-865

[6] High-performance In0.5Al0.5As/In0.5Ga0.5As high electron mobility transistors on GaAs [J].

Higuchi, K ;

Kudo, M ;

Mori, M ;

Mishima, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11) :5642-5645

[7] HIGH-QUALITY INXGA1-XAS/INALAS MODULATION-DOPED HETEROSTRUCTURES GROWN LATTICE-MISMATCHED ON GAAS SUBSTRATES [J].

INOUE, K ;

HARMAND, JC ;

MATSUNO, T .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :313-317

[8] APPLICATION OF CRITICAL COMPOSITIONAL DIFFERENCE CONCEPT TO THE GROWTH OF LOW DISLOCATION DENSITY (LESS-THAN-104/CM2) INXGA1-XAS (X-LESS-THAN-OR-EQUAL-TO-0.5) ON GAAS [J].

KRISHNAMOORTHY, V ;

LIN, YW ;

PARK, RM .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (05) :1752-1757

[9] HIGH G(M)IN(0.5)AL(0.5)AS/IN0.5GA0.5AS HIGH-ELECTRON-MOBILITY TRANSISTORS GROWN LATTICE-MISMATCHED ON GAAS SUBSTRATES [J].

MISHIMA, T ;

HIGUCHI, K ;

MORI, M ;

KUDO, M .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :1230-1235

[10] DEVICE QUALITY IN0.4GA0.6AS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY [J].

RIBAS, P ;

KRISHNAMOORTHY, V ;

PARK, RM .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1040-1042

← 1 2 →