Observation of MBE-grown cubic-GaN/GaAs and cubic-GaN/3C-SiC interfaces by high resolution transmission electron microscope

被引：24

作者：

Okumura, H ^{[1
]}

Ohta, K ^{[1
]}

Nagatomo, T ^{[1
]}

Yoshida, S ^{[1
]}

机构：

[1] SHIBAURA INST TECHNOL,MINATO KU,TOKYO 108,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 164卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)01073-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Interface structures of cubic-GaN on GaAs and 3C-SiC substrates grown by gas-source molecular beam epitaxy using NH3 plasma were examined by high resolution transmission electron microscopy. There is no intermediated layer at the interface for both the structures. It was found that there are pyramid-like structures formed by (111) facets at cubic-GaN/GaAs interfaces and its interface is fairly rough. On the contrary, interfaces of cubic-GaN/3C-SiC are quite flat without specific structures, which results in good quality GaN epilayers.

引用

页码：149 / 153

页数：5

共 6 条

[1] LOW-TEMPERATURE GROWTH OF GAN AND ALN ON GAAS UTILIZING METALORGANICS AND HYDRAZINE [J].