Carrier-envelope phase-controlled quantum interference of injected photocurrents in semiconductors

被引:148
作者
Fortier, TM [1 ]
Roos, PA
Jones, DJ
Cundiff, ST
Bhat, RDR
Sipe, JE
机构
[1] Natl Inst Stand & Technol, Joint Inst Lab Astrophys, Boulder, CO 80309 USA
[2] Univ Colorado, Boulder, CO 80309 USA
[3] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1103/PhysRevLett.92.147403
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We demonstrate quantum interference control of injected photocurrents in a semiconductor using the phase stabilized pulse train from a mode-locked Ti:sapphire laser. Measurement of the comb offset frequency via this technique results in a signal-to-noise ratio of 40 dB (10 Hz resolution bandwidth), enabling solid-state detection of carrier-envelope phase shifts of a Ti:sapphire oscillator.
引用
收藏
页码:147403 / 1
页数:4
相关论文
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