Tin dioxide sol-gel derived films doped with platinum and antimony deposited on porous silicon

被引：21

作者：

Savaniu, C

Arnautu, A

Cobianu, C

Craciun, G

Flueraru, C

Zaharescu, M

Parlog, C

Paszti, F

Van den Berg, A

机构：

[1] Natl Inst Microtechnol, Bucharest 77550, Romania

[2] Romanian Acad, Inst Phys Chem, Bucharest, Romania

[3] KFKI Res Inst Particle & Nucl Phys, H-1525 Budapest, Hungary

[4] Univ Twente, MESA Res Inst, NL-7500 AE Enschede, Netherlands

来源：

THIN SOLID FILMS | 1999年 / 349卷 / 1-2期

关键词：

Pt and Sb additives; porous silicon; sol-gel; SnO2 thin films;

D O I：

10.1016/S0040-6090(99)00141-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SnO2 sol-gel derived thin films doped simultaneously with Pt and Sb are obtained and reported for the first time. The Sn sources were tin(IV) ethoxide or tin(II) ethylhexanoate, while hexachloroplatinic acid (H2PtCl6) and antimony chloride (SbCl3) were used as platinum and antimony sources, respectively. Transparent, crack-free layers, deposited on silicon or porous silicon (PS) substrates were obtained with antimony doping in the range (0-2)% M, while the platinum addition was limited to maximum 1% M, due to the strong acidic character of the Pt and Sb precursors. Ternary sol (Pt:Sb:SnO2) stability was analysed by viscosity studies while the surface roughness of the doped SnO2 layers on both types of substrates was investigated by atomic force microscopy (AFM) measurements. Rutherford Backscattering spectra (RBS) analysis proved that pores of PS substrates had been filled as a result of multiple spin-casting processes. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：29 / 35

页数：7

共 6 条

[1] GAS-SENSING PROPERTIES OF CHEMICALLY DEPOSITED SNOX FILMS DOPED WITH PT AND SB
AMBRAZEVICIENE, V
GALDIKAS, A
GREBINSKIJ, S
MIRONAS, A
TVARDAUSKAS, H
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1993, 17 (01) : 27 - 33
[2] SOLID-STATE GAS SENSORS - A REVIEW
AZAD, AM
AKBAR, SA
MHAISALKAR, SG
BIRKEFELD, LD
GOTO, KS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (12) : 3690 - 3704
[3] Tin dioxide sol-gel derived than films deposited on porous silicon
Cobianu, C
Savaniu, C
Buiu, O
Dascalu, D
Zaharescu, M
Parlog, C
van den Berg, A
Pecz, B
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1997, 43 (1-3) : 114 - 120
[4] CRACIUN G, 1997, EUROSENSORS, V11, P485
[5] Investigation of the morphology of porous silicon by Rutherford Backscattering Spectrometry
Szilagyi, E
Hajnal, Z
Paszti, F
Buiu, O
Craciun, G
Cobianu, C
Savaniu, C
Vazsonyi, E
[J]. MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES, 1997, 248-2 : 373 - 376
[6] DIP-COATING OF SB-DOPED SNO2 FILMS BY ETHANOLAMINE-ALKOXIDE METHOD
TAKAHASHI, Y
WADA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (01) : 267 - 272

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