Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon

被引：55

作者：

Gebel, T

Voelskow, M

Skorupa, W

Mannino, G

Privitera, V

Priolo, F

Napolitani, E

Carnera, A

机构：

[1] Forschungszentrum Rossendorf EV, D-01314 Dresden, Germany

[2] Nanopare GmbH, Dresden, Germany

[3] CNR, IMETEM, Catania, Italy

[4] INFM, Catania, Italy

[5] Univ Catania, Catania, Italy

[6] INFM, Padua, Italy

[7] Univ Padua, Padua, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 186卷

关键词：

shallow junctions; flash lamp annealing (FLA); rapid thermal annealing (RLA); spike anneal;

D O I：

10.1016/S0168-583X(01)00900-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper we report on recent results obtained from flash lamp annealing (FLA) for the formation of ultra-shallow junctions. Si(100) wafers were implanted at ultra-low energy (500 eV) with boron to a fluence of 10(15) ions/cm(2). FLA was carried out at temperatures of 1100 and 1200degreesC with a soak time of 20 ms. For comparison conventional rapid thermal annealing (RTA) was performed at 1100 and 1200degreesC. The boron diffusion and the dopant activation were investigated by secondary ion mass spectroscopy (SIMS) and spreading resistance profiling (SRP). The activated doses after FLA were as high as 20% of the implanted dose and confined in a layer of 60 nm. The sheet resistances were comparable to those after RTA treatment. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：287 / 291

页数：5

共 8 条

[1] Ultra-shallow junctions by ion implantation and rapid thermal annealing: Spike-anneals, ramp rate effects [J].