RAPID ANNEALING AND THE ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON INTO SILICON

被引：179

作者：

MICHEL, AE ^{[1
]}

RAUSCH, W ^{[1
]}

RONSHEIM, PA ^{[1
]}

KASTL, RH ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.98160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：416 / 418

页数：3

共 15 条

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[2]

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[4] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].

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[5] STUDIES ON THE LATTICE POSITION OF BORON IN SILICON [J].

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[6] RAPID THERMAL ANNEALING OF BORON-IMPLANTED SILICON USING AN ULTRAHIGH POWER ARC LAMP [J].

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DELINE, VR ;

MADER, S ;

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[7]

HODGSON RT, 1984, MATER RES SOC S P, V23, P253

[8]

Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[9]

HOPKINS LC, 1985, J ELECTROCHEM SOC, V32, P2035

[10] RAPID ISOTHERMAL ANNEALING OF BORON ION-IMPLANTED JUNCTIONS [J].

LASKY, JB .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :6009-6018

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