MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON

被引：139

作者：

FAIR, RB ^{[1
]}

WORTMAN, JJ ^{[1
]}

LIU, J ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27650

来源：

关键词：

D O I：

10.1149/1.2115263

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2387 / 2394

页数：8

共 21 条

[1] BENTON JL, 1982, MATERIALS RES SOC P, V4, P765
[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93
[3] OXIDATION, IMPURITY DIFFUSION, AND DEFECT GROWTH IN SILICON - AN OVERVIEW
FAIR, RB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1360 - 1368
[4] FAIR RB, 1981, APPLIED SOLID STAT S, V28
[5] FAIR RB, 1982, ELECTROCHEMICAL SOC, P963
[6] FAIR RB, 1983, 1983 INT EL DEV M, P658
[7] FAIR RB, 1983, JUN DEV RES C IEEE B
[8] FAIR RB, UNPUB
[9] GOSELE U, 1983, MATERIALS RES SOC S, P45
[10] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON
HU, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1567 - 1573