OXIDATION, IMPURITY DIFFUSION, AND DEFECT GROWTH IN SILICON - AN OVERVIEW

[1] ALLEN WG, 1978, SOLID STATE ELECTRON, V33, P1030

[2] BORON IN NEAR-INTRINSIC (100) AND (111) SILICON UNDER INERT AND OXIDIZING AMBIENTS-DIFFUSION AND SEGREGATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 813 - 819

[3] OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1030 - 1033

[4] BARUCH P, 1976, RAD EFFECTS SEMICOND, P126

[5] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[6] CHEN TC, 1970, P IEEE, V58, P588

[7] OXIDATION STACKING-FAULTS IN EPITAXIAL SILICON-CRYSTALS [J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (04) : 705 - 713

[8] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[9] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) : 4465 - &

[10] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118

[1] ALLEN WG, 1978, SOLID STATE ELECTRON, V33, P1030

[2] BORON IN NEAR-INTRINSIC (100) AND (111) SILICON UNDER INERT AND OXIDIZING AMBIENTS-DIFFUSION AND SEGREGATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 813 - 819

[3] OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1030 - 1033

[4] BARUCH P, 1976, RAD EFFECTS SEMICOND, P126

[5] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[6] CHEN TC, 1970, P IEEE, V58, P588

[7] OXIDATION STACKING-FAULTS IN EPITAXIAL SILICON-CRYSTALS [J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (04) : 705 - 713

[8] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[9] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) : 4465 - &

[10] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118