RAPID THERMAL ANNEALING OF BORON-IMPLANTED SILICON USING AN ULTRAHIGH POWER ARC LAMP

被引：47

作者：

HODGSON, RT ^{[1
]}

DELINE, VR ^{[1
]}

MADER, S ^{[1
]}

GELPEY, JC ^{[1
]}

机构：

[1] EATON ION IMPLANTAT SYST,BEVERLY,MA 01915

来源：

关键词：

D O I：

10.1063/1.94836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：589 / 591

页数：3

共 6 条

[1] Baumgart H., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P349
[2] ANNEALING OF ANTIMONY IMPLANTED SILICON WITH HALOGEN LAMP IRRADIATION
BORISENKO, VE
LABUNOV, VA
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02): : K173 - K176
[3] HODGSON R, UNPUB
[4] Hodgson R. T., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P355
[5] Hofker W. K., 1973, ION IMPLANTATION SEM, P133
[6] TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON
KALISH, R
SEDGWICK, TO
MADER, S
SHATAS, S
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 107 - 109