TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON

被引：52

作者：

KALISH, R ^{[1
]}

SEDGWICK, TO ^{[1
]}

MADER, S ^{[1
]}

SHATAS, S ^{[1
]}

机构：

[1] AG ASSOC,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.94572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：107 / 109

页数：3

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